Semiconductor device and manufacturing method for the same

Details Semiconductor device and manufacturing method for the same Semiconductor device and manufacturing method for the same

2007-04-10

2007-04-10

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S923000, C257S924000, C257S774000, C257S775000, C257S533000, C257S595000, C257S602000

Reexamination Certificate

active

11090112

ABSTRACT:
A lower interconnection is provided on a semiconductor substrate. A MIM capacitive element is provided on a first interlayer insulation film in which the lower interconnection is buried, and includes a lower electrode, an upper electrode, and a dielectric film sandwiched therebetween. An upper interconnection is provided on a second interlayer insulation film in which the MIM capacitive element is buried. A contact electrically connects the lower electrode and the upper interconnection. The lower electrode is mainly formed of Al, so that they are lower in electrical resistance than barrier metal, and also low in stress value. Therefore, it becomes possible to widen the area of the lower electrode for electrically connecting the contact while restraining their influences on charge accumulation and close contact between the lower electrode and the insulation film. In addition, since the electrical resistance is lowered, the thickness of the lower electrode can be increased. Accordingly, the MIM capacitive element with a large capacitance can be manufactured with a high yield.

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