Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-18
2007-09-18
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S199000, C438S373000
Reexamination Certificate
active
11079520
ABSTRACT:
A semiconductor device includes a first diffusion region including germanium atoms and first impurity atoms, provided on a surface layer of a semiconductor substrate, the first impurity atoms contributing to electric conductivity, and a second diffusion region including second impurity atoms, provided shallower than the first diffusion region from a surface of the first diffusion region, the second impurity atoms not contributing to the electric conductivity.
REFERENCES:
patent: 5514902 (1996-05-01), Kawasaki et al.
patent: 6174778 (2001-01-01), Chen et al.
patent: 6335233 (2002-01-01), Cho et al.
patent: 6696729 (2004-02-01), Adachi
patent: 2004/0132249 (2004-07-01), Mitsuda et al.
patent: 8-78674 (1996-03-01), None
H. Fukutome et al., “Fluorine Implantation Impart in Extension Region on the Electrical Performance of Sub-50nm P-MOSFETs”, IEEE, 2003, 4 pages.
M. Hamaguchi et al., “Fluorine or Nitrogen Ion Implantation for the Suppression of Baron Diffusion”, Extended Abstracts (The 51stSpring Meeting, 2004); The Japan Society of Applied Physics and Related Societies, Mar. 28, 2004, pp. 79 and 965, No. 2.
Dang Phuc T.
Foley & Lardner LLP
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