Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Patent
1998-03-11
2000-04-11
Chang, Joni
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
438488, H01L 2120, H01L 2136
Patent
active
060487801
ABSTRACT:
A semiconductor device having an active layer comprising crystalline silicon, said active layer comprising a first layer comprising crystalline silicon formed on an insulating surface and a second layer comprising crystalline silicon formed on said first layer, wherein said first layer contains a metal element at a first concentration while said second layer is free from said metal element or contains said metal element at a second concentration which is lower than said first concentration.
REFERENCES:
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5639698 (1997-06-01), Yamazaki et al.
Chang Joni
Coleman William David
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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