Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-07-18
2006-07-18
Kang, Donghee (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S151000, C438S152000, C257S066000, C257S067000, C257S068000
Reexamination Certificate
active
07078275
ABSTRACT:
An object is to provide a semiconductor device manufacturing method which makes possible a thin film transistor which is little affected by crystal grain boundaries, even when the channel width of the thin film transistor is made larger than the crystal grains of the semiconductor material. To this end, a thin film transistor of this invention comprises a gate electrode22, source region24, drain region25, and channel formation region26. The silicon film used in forming the active region comprises a plurality of substantially single-crystal silicon crystal grains, and regions including crystal grain boundaries which exist in the longitudinal direction of the channel formation region26(the direction L in the drawings) are removed. By this means, crystal grain boundaries are prevented from being included in each channel formation region26, and the effective channel width can be increased.
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Hiroshima Yasushi
Miyasaka Mitsutoshi
Kang Donghee
Oliff & Berridg,e PLC
Seiko Epson Corporation
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