Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-12
2011-07-12
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S333000, C257S334000, C257S341000, C257S362000
Reexamination Certificate
active
07977739
ABSTRACT:
Generally, a power MOSFET mainly includes an active region occupying most of an internal region (a region where a gate electrode made of polysilicon or the like is integrated), and a surrounding gate contact region (where the gate electrode made of polysilicon or the like is derived outside a source metal covered region to make contact with a gate metal) (see FIG.65in a comparative example). Since the gate electrode made of polysilicon or the like has a stepped portion existing between both regions, a focus margin may be reduced in a lithography step, including exposure or the like, for formation of a contact hole for a source or for a gate. The invention of the present application provides a semiconductor device having a trench gate type power MISFET with a gate electrode protruding from an upper surface of a semiconductor substrate, in which respective main upper surfaces of the gate electrode in an active region and a gate contact region are substantially at the same height.
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Miles & Stockbridge P.C.
Renesas Electronics Corporation
Wojciechowicz Edward
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