Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-03
2005-05-03
Ho, Hoai (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S108000
Reexamination Certificate
active
06887778
ABSTRACT:
A semiconductor device and its manufacturing method with which the connection reliability can be improved without complicating the manufacturing process. Semiconductor chip102is mounted on the principal surface of insulated substrate104, and a conductive paste containing a heat-curing epoxy resin is supplied to via holes116from the back of insulated substrate104. Then, solder balls118are transferred onto the conductive paste of insulated substrate104, and reflow soldering is applied in order to bond solder balls118to insulated substrate104. During the reflow soldering, the heat-curing epoxy resin forms resin parts120around solder balls118.
REFERENCES:
patent: 6372547 (2002-04-01), Nakamura et al.
patent: 20020003299 (2002-01-01), Nakamura et al.
Masumoto Mutsumi
Watanabe Masako
Brady III Wade James
Ho Hoai
Le Thao P.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
Semiconductor device and manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3457923