Semiconductor device and manufacture thereof

Details Semiconductor device and manufacture thereof Semiconductor device and manufacture thereof

1997-10-01

1998-11-03

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, H01L 2976

Patent

active

058313176

ABSTRACT:
A high breakdown voltage semiconductor device is formed in a desired region on a semiconductor substrate. An impurity diffusion layer 32 is disposed at the center of the high breakdown voltage semiconductor device. The impurity diffusion layer 32 has a rounded or semi-circular configuration at both ends thereof having a particular curvature. The impurity diffusion layer 32 serves as drain. An impurity diffusion layer 33 is formed in the neighborhood and periphery of the impurity diffusion layer 32. The width of a portion 33b of the impurity diffusion layer 33 in abutting relation with the two semi-circular end portions of the impurity diffusion layer 32 is wider than that of a remaining portion 33a of the impurity diffusion layer 33 in abutting relation with longitudinal sides of the impurity diffusion layer 32. The rounded end portions of the impurity diffusion layer 32 have a larger curvature than the longitudinal side portions thereof. In other words, the width of the portion 33b of the impurity diffusion layer 33 in abutting relation on the much-curved region of the impurity diffusion layer 32 is wider than that of the remaining portion 33a in abutting relation on the less-curved region of the impurity diffusion layer 32. In a given example, the width of the portion 33b of the impurity diffusion layer 33 having a smaller curvature is 3 .mu.m and that of the remaining portion 33a thereof is 4 .mu.m.

REFERENCES:
patent: 4710791 (1987-12-01), Shirato et al.

Affiliated with

Also associated with

Rating

Semiconductor device and manufacture thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacture thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacture thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-692464