Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2009-07-09
2010-06-29
Hoang, Quoc D (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S164000, C257SE21094, C257SE21104
Reexamination Certificate
active
07745269
ABSTRACT:
An object is to provide an element structure of a semiconductor device for increasing an etching margin for various etching steps and a method for manufacturing the semiconductor device having the element structure. An island-shaped semiconductor layer is provided over an insulator having openings. The island-shaped semiconductor layer includes embedded semiconductor layers and a thin film semiconductor layer. The embedded semiconductor layers have a larger thickness than that of the thin film semiconductor layer.
REFERENCES:
patent: 5121186 (1992-06-01), Wong et al.
patent: 5338702 (1994-08-01), Kobeda et al.
patent: 5341028 (1994-08-01), Yamaguchi et al.
patent: 5583366 (1996-12-01), Nakazawa
patent: 5656825 (1997-08-01), Kusumoto et al.
patent: 5940690 (1999-08-01), Kusumoto et al.
patent: 6337232 (2002-01-01), Kusumoto et al.
patent: 6455875 (2002-09-01), Takemura et al.
patent: 6541795 (2003-04-01), Kusumoto et al.
patent: 6882018 (2005-04-01), Ohtani et al.
patent: 6953714 (2005-10-01), Kimura et al.
patent: 7223666 (2007-05-01), Ohtani et al.
patent: 7238557 (2007-07-01), Hayakawa
patent: 7262469 (2007-08-01), Makita
patent: 2007/0210451 (2007-09-01), Ohtani et al.
patent: 2007/0228374 (2007-10-01), Hayakawa
patent: 02-076264 (1990-03-01), None
patent: 05-013762 (1993-01-01), None
patent: 07-335906 (1995-12-01), None
patent: 2003-218362 (2003-07-01), None
Costellia Jeffrey L.
Hoang Quoc D
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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