Semiconductor device and manufacture method thereof

Details Semiconductor device and manufacture method thereof Semiconductor device and manufacture method thereof

2007-06-07

2009-08-18

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257SE29130, C257SE21409, C438S270000

Reexamination Certificate

active

07576389

ABSTRACT:
The present invention provides a trench gate Tr having a first gate electrode and a second gate electrode in the inside of a groove. The first gate electrode is provided in a groove lower part defining a channel of the Tr with a gate oxide film interposed between the first gate electrode and the substrate. The second gate electrode is provided in a groove upper part facing a Tr impurity diffusion layer, with a gate oxide film and a groove side wall film interposed between the second gate electrode and the groove upper part. The provision of the composite film consisting of the gate oxide film and the groove side wall between gate electrode and the substrate in the groove upper part enables reduction of the parasitic capacitance of the gate electrode.

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