Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-02-15
2009-08-04
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S149000, C257SE27100, C257SE51005, C257SE29151
Reexamination Certificate
active
07569886
ABSTRACT:
An object is to provide an element structure of a semiconductor device for increasing an etching margin for various etching steps and a method for manufacturing the semiconductor device having the element structure. An island-shaped semiconductor layer is provided over an insulator having openings. The island-shaped semiconductor layer includes embedded semiconductor layers and a thin film semiconductor layer. The embedded semiconductor layers have a larger thickness than that of the thin film semiconductor layer.
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Costellia Jeffrey L.
Hoang Quoc D
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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