Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-29
2010-06-29
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S233000, C257S231000, C257S448000, C257S435000, C257S293000, C257S294000, C257S461000, C257S440000, C257SE27133, C257SE27134, C257SE27135
Reexamination Certificate
active
07745857
ABSTRACT:
The object of the invention is to provide a semiconductor device that can form photodiodes that do not short circuit, without damage that causes leakage, despite formation of the opening part, and its manufacturing method. The second semiconductor layer (12, 16) of the second conductivity type is formed on the main surface of the first semiconductor layer (10, 11) of the first conductivity type. Element-separating regions (13, 14, 15, 17) formed at least on the second semiconductor layer separate the device into the regions of plural photodiodes (PD1-PD4). Conductive layer18is formed on the second semiconductor layer16in a pattern that is divided for each of the photodiodes and is connected to the second semiconductor layer16along the outer periphery with respect to all of the plural photodiodes. Insulation layer (19, 21) is formed on the entire surface to cover conductive layer18. An opening part, which reaches the second semiconductor layer16, is formed in the insulation layer (19, 21) in the region inside the pattern of conductive layer18.
REFERENCES:
patent: 5844290 (1998-12-01), Furumiya
patent: 2005/0051860 (2005-03-01), Takeuchi et al.
patent: 2005/0101073 (2005-05-01), Bae et al.
Okumura Yohichi
Tomomatsu Hiroyuki
Brady III Wade J.
Franz Warren L.
Nguyen Cuong Q
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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