Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-13
2008-05-13
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S199000
Reexamination Certificate
active
11199380
ABSTRACT:
A semiconductor device, which can use silicon-germanium for a source/drain extension of pMOS, form a silicide layer on the source/drain, and realize a high-speed operation, is provided by comprising a gate electrode formed in a first conductive type region of a semiconductor substrate via an insulator, a first sidewall formed on a side face of the gate electrode, a second sidewall formed on a side face of the first sidewall, a semiconductor layer formed below the second sidewall, including a first impurity layer of a second conductive type and containing germanium, a second impurity layer formed in a region outside the second sidewall and containing impurities of the second conductive type with a higher concentration than those in the first impurity layer, and a silicide layer formed on the second impurity layer.
REFERENCES:
patent: 6365468 (2002-04-01), Yeh et al.
patent: 7078285 (2006-07-01), Suenaga
patent: 08-186257 (1996-07-01), None
P.R. Chidambaram et al., “35% Drive Current Improvement from Recessed-SiGe Drain Extensions on 37 nm Gate Length PMOS”, 2004 Symposium of VLSI Technology Digest of Technical Papers, pp. 48-49.
Foley & Lardner LLP
Kabushiki Kaisha Toshiba
Vu David
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