Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

1997-05-22

1999-02-16

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257528, 257379, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058723811

ABSTRACT:
A high-resistance polycrystalline Si resistor having a stable resistance value even when micro-sized and a low-resistance polycrystalline Si resistor having a sufficiently low desired resistance value wherein a polycrystalline Si film is formed on an insulation film located on a Si substrate, high-resistance-making ion implantation is applied to the entire surface and medium-resistance-making ion implantation is selectively applied to a medium-resistance-making region of the polycrystalline Si film. Low-resistance-making ion implantation is selectively applied to a low-resistance-making region of the polycrystalline Si film. The product is annealed to grow the polycrystalline Si film by solid-phase growth, the film is patterned to form a high-resistance polycrystalline Si resistor, medium-resistance polycrystalline Si resistor, and low-resistance polycrystalline Si resistor.

REFERENCES:
patent: 4489104 (1984-12-01), Lee
patent: 5212108 (1993-05-01), Liu et al.
patent: 5789296 (1998-08-01), Sung et al.

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