Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

2007-08-21

2007-08-21

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S544000, C257S213000, C257SE21048, C257SE21190, C257SE29257

Reexamination Certificate

active

11094190

ABSTRACT:
There is provided a power MISFET which includes a semiconductor region of a first conductivity, a semiconductor base region of a second conductivity, a pillar region, a first major electrode region of a first conductivity on the base region, a second major electrode region connected with at least the semiconductor region and a part of the pillar region, a control electrode and an electrode pad connected with the control electrode. The pillar region including a first region of a first conductivity type and a second region of a second conductivity type is not formed under the electrode pad. Also, a method for manufacturing a MISFET is provided.

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patent: 2001-298191 (2001-10-01), None

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