Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

2006-12-19

2006-12-19

Toledo, Fernando L. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S371000, C257SE21193, C257SE21165, C257SE21635, C438S275000

Reexamination Certificate

active

07151299

ABSTRACT:
The present invention provides a semiconductor device structure and an easy-to-use method for manufacturing thereof enabling to suppress wafer contamination and to form the semiconductor device superior in control and uniformity of the film thickness in the semiconductor device including plural kinds of transistors provided with a gate insulator film with different film thickness.According to the method, plural kinds of transistors with gate insulator films having different electric film thickness are formed in the steps offorming an insulating film layer including a lamination structure of at least first insulating film104constituted of first high-dielectric insulating material and second insulating film103constituted of second high-dielectric insulating material on the same silicon substrate101,selectively etching and removing the upper insulating film103on the part of region105by use of mask107and utilizing multi-oxide process while reducing leak electric current.

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