Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

2006-10-24

2006-10-24

Tsai, H. Jey (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S304000

Reexamination Certificate

active

07126178

ABSTRACT:
A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

REFERENCES:
patent: 6359300 (2002-03-01), Economikos et al.
patent: 6436760 (2002-08-01), Wong et al.
patent: 6552380 (2003-04-01), Sato et al.
patent: 2001/0042880 (2001-11-01), Divakaruni et al.
patent: 2002/0142571 (2002-10-01), Noguchi
patent: 2002/0171099 (2002-11-01), Sato et al.
patent: 2003/0013259 (2003-01-01), Chidambarrao et al.
patent: 2004/0082137 (2004-04-01), Huang et al.
patent: 2000-269462 (2000-09-01), None

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