Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

1998-02-17

2000-02-08

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438620, 438622, 438624, 438637, 438618, H01L 21768

Patent

active

060228040

ABSTRACT:
An integrated circuit having a multi-layered metal wiring structure with interlayer insulating films therebetween. A small cutout is made in a metal wiring when it is desirous to have the metal wiring touch a contact formed in a through hole passing through said cutout. A larger cutout is made in a metal wiring when it is desirous to have the metal wiring remain spaced from a contact formed in a through hole passing through said cutout.

REFERENCES:
patent: 4840923 (1989-06-01), Flagello et al.
patent: 4872050 (1989-10-01), Okamoto et al.

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