Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

2005-08-23

2005-08-23

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S371000

Reexamination Certificate

active

06933575

ABSTRACT:
A method is provided for manufacturing a semiconductor device that can secure a high breakdown voltage and yet optimize wells. The semiconductor device includes a semiconductor substrate of a first conductivity type, a well of the first conductivity type, a gate dielectric layer formed over the semiconductor substrate, a gate electrode formed over the gate dielectric layer, and a source/drain layer of the second conductivity type formed in the semiconductor substrate. The well of the first conductivity type includes a channel region and is formed in a manner not to overlap the source/drain layers.

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