Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-07
2005-06-07
Sarkar, Asok Kumar (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S202000
Reexamination Certificate
active
06903424
ABSTRACT:
A semiconductor device (100) according to the present invention comprises a vertical PNP bipolar transistor (20), an NMOS transistor (50) and a PMOS transistor (60) that are of high dielectric strength, and a P-type semiconductor substrate1, as shown in FIG.2. A substrate isolation layer (21) of the PNP bipolar transistor (20), a drain buried layer (51) of the NMOS transistor (50), and a back gate buried layer (61) of the PMOS transistor (60) are formed simultaneously by selectively implanting N-type impurities, such as phosphorous, in the semiconductor substrate (1). This invention greatly contributes to curtailing the processes of fabricating BiCMOS ICs and the like including vertical bipolar transistors with easily controllable performance characteristics, such as a current amplification factor, and MOS transistors with high dielectric strength and makes even more miniaturization of such ICs achievable.
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International Search Report dated May 13, 2003.
Kanematsu Shigeru
Mori Hideki
Ookubo Kenichi
Kananen Ronald P.
Rader & Fishman & Grauer, PLLC
Sarkar Asok Kumar
Sony Corporation
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