Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-27
2005-09-27
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S258000
Reexamination Certificate
active
06949790
ABSTRACT:
A semiconductor device is capable of being applied with both a positive and a negative voltage to its control gate, and writing to its memory requires a low voltage. A control gate is formed on a memory unit region of a field oxide film, and an inter-layer silicon oxide film is formed on its surface. A gate oxide film for a non-volatile memory is formed on a P substrate between N type diffusion layers. The floating gate is formed on the inter-layer silicon oxide film, the field oxide film, and the gate oxide film for the non-volatile memory. Since a large coupling ratio between the control gate and the floating gate is available on the field oxide film, memory rewriting requires only a low voltage. Further, since the control gate is formed by a poly silicon film, both a positive voltage and a negative voltage can be applied to the control gate.
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Iwai Moriya
Nakanishi Hiroaki
Yoshida Masaaki
Dickstein , Shapiro, Morin & Oshinsky, LLP
Hoang Quoc
Nelms David
Ricoh & Company, Ltd.
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