Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2005-09-20
2005-09-20
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S784000, C257S723000, C257S773000, C257S778000
Reexamination Certificate
active
06946747
ABSTRACT:
A semiconductor device of the MCM type capable of high-speed operation and low power consumption and its manufacturing method are provided. A plurality of semiconductor chips, each having an internal circuit as well as an external connection circuit drawn from the internal circuit, are mounted on the same supporting substrate of this semiconductor device. Semiconductor chips are connected with each other, not by way of the external connection circuits, but directly at a portion between the internal circuits through wiring. This wiring is patterned on an insulating film provided on the supporting substrate and covers the semiconductor chips. Accordingly, through connection holes formed on the insulating film, connection can be established to the internal circuits or the wiring can be formed on the supporting substrate side. If the wiring is formed on the supporting substrate side, the semiconductor chips are to be mounted facing down relative to the supporting substrate.
REFERENCES:
patent: 6403448 (2002-06-01), Reddy
Ezaki Takayuki
Hirayama Teruo
Ishikawa Natsuya
Mori Yukari
Ozaki Hiroshi
Kananen Ronald P.
Parekh Nitin
Rader & Fishman & Grauer, PLLC
Sony Corporation
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