Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

1989-09-25

1991-12-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 52, 437241, 357 236, H01L 2144

Patent

active

050717901

ABSTRACT:
In A semiconductor device for forming a bit line and a metal electrode on a semiconductor substrate in the semiconductor device making use of an insulating film between said bit line and said metal electrode, the semiconductor device is characterized in that the semiconductor device comprises a plasma oxynitride film with the same etch rate as said insulation film between said bit line said insulation film.

REFERENCES:
patent: 4342617 (1982-08-01), Fu et al.

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