Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-23
2011-08-23
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257SE29258, C257SE29120
Reexamination Certificate
active
08004040
ABSTRACT:
Provided are a semiconductor device which can be manufactured at low cost and has a low on-resistance and a high withstand voltage, and its manufacturing method. The semiconductor device comprises an N-type well area formed on a P-type semiconductor substrate, a P-type body area formed within the well area, an N-type source area formed within the body area, an N-type drain area formed at a distance from the body area within the well area, a gate insulating film formed so as to overlay a part of the body area, a gate electrode formed on the gate insulating film and a P-type buried diffusion area which makes contact with the bottom of the body area and extends to an area beneath the drain area in a direction parallel to the surface of the semiconductor substrate within the well area.
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Adan Alberto
Ichijo Hisao
Kagisawa Atsushi
Naruse Kazushi
Jefferson Quovaunda
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
Smith Matthew
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