Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-08
2006-08-08
Owens, Douglas W (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000
Reexamination Certificate
active
07087956
ABSTRACT:
In a semiconductor device having a memory element and a logic element formed on the same semiconductor substrate, a transistor of the memory element comprises a gate electrode (16) embedded within a trench (13) formed in a semiconductor substrate (11) through a gate insulating film (15) and a diffusion layer (17) formed on the side of the semiconductor substrate (11) at a sidewall of the trench (13), and a take-out electrode (20) connected to the diffusion layer (17) is provided so that the take-out electrode overlaps the gate electrode (16) through a first interlayer insulating film (insulating film) (18) on the gate electrode (16). A word line (16) is provided in the trench (13) and an impurity concentration of the diffusion layer (17) is decreased as a depth thereof is increased.
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