Semiconductor device and fabrication process thereof

Details Semiconductor device and fabrication process thereof Semiconductor device and fabrication process thereof

2005-06-06

2009-06-23

Norton, Nadine (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C216S063000, C438S618000, C438S707000, C438S717000, C438S714000, C438S958000, C430S323000, C430S329000, C156S922000, C156S922000

Reexamination Certificate

active

07550394

ABSTRACT:
A method of fabricating a semiconductor device includes a dry etching process of a silicon surface. The dry etching process is conducted by an etching gas containing at least one gas species selected from the group consisting of: HBr, HCl, Cl2, Br2and HI, wherein the dry etching process includes a first step conducted at a first temperature; and a second step conducted at a second temperature.

REFERENCES:
patent: 5423941 (1995-06-01), Komura et al.
patent: 5605600 (1997-02-01), Muller et al.
patent: 6103585 (2000-08-01), Michaelis et al.
patent: 6692903 (2004-02-01), Chen et al.
patent: 6849389 (2005-02-01), Mahorowala
patent: 7030027 (2006-04-01), Suzuki
patent: 2004/0157385 (2004-08-01), Ikezawa
patent: 2004-152784 (2004-05-01), None
S. Wolf, Silicon Processing for the VLSI Era, vol. 4, Lattice Press, (2002) pp. 439-440.
S.J. Pearton, Plasma Chemistry and Processing, vol. 14, No. 4, (1994) pp. 505-522.

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