Semiconductor device and fabrication process thereof

Details Semiconductor device and fabrication process thereof Semiconductor device and fabrication process thereof

2007-01-09

2007-01-09

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S208000, C257S207000, C257S206000, C438S598000, C438S618000

Reexamination Certificate

active

10973440

ABSTRACT:
A semiconductor device includes a substrate having first and second device regions separated from each other by a device isolation region, a first field effect transistor having a first polysilicon gate electrode and formed in the first device region, a second field effect transistor having a second polysilicon gate electrode and formed in the second device region, a polysilicon pattern extending over the device isolation region from the first polysilicon gate electrode to the second polysilicon gate electrode, and a silicide layer formed on a surface of the first polysilicon gate electrode, a surface of said the polysilicon gate electrode and a surface of the polysilicon pattern so as to extend on the polysilicon pattern from the first polysilicon gate electrode to the second polysilicon gate electrode, the silicide layer having a region of increased film thickness on the polysilicon pattern, wherein the silicide layer has a surface protruding upward in the region of increased film thickness.

REFERENCES:
patent: 6255702 (2001-07-01), Iwata et al.
patent: 2002/0142540 (2002-10-01), Katayama
patent: 10-12745 (1998-01-01), None
patent: 10-74846 (1998-03-01), None
patent: 11-26767 (1999-01-01), None

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