Semiconductor device and fabrication process therefor

Details Semiconductor device and fabrication process therefor Semiconductor device and fabrication process therefor

1997-11-10

1999-09-07

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257374, 257368, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059491116

ABSTRACT:
A semiconductor device formed on a semiconductor substrate; includes diffusion layers for source and drain regions formed in a surface portion of the semiconductor substrate. A gate electrode is formed on the semiconductor substrate with an intervening gate insulation film. An interlayer insulation film is formed on the gate electrode, and an interconnection layer is formed on the interlayer insulation film. The gate electrode is formed on at least a portion of the source and drain regions and on a channel region located between the source and drain regions. The gate electrode is electrically connected to the interconnection layer via a contact hole formed in the interlayer insulation film on the gate electrode.

REFERENCES:
patent: 4682408 (1987-07-01), Takebayashi
patent: 5014098 (1991-05-01), Schlais et al.
patent: 5041895 (1991-08-01), Contiero et al.

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