Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2010-11-23

2011-11-22

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S256000

Reexamination Certificate

active

08063439

ABSTRACT:
A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction regions adjoins the first and the second type wells. A gate electrode disposed on the semiconductor substrate and overlies at least two of the junction regions. A source and a drain are in the semiconductor substrate oppositely adjacent to the gate electrode.

REFERENCES:
patent: 4277881 (1981-07-01), Godejahn, Jr.
patent: 4587711 (1986-05-01), Godejahn, Jr.
patent: 5342802 (1994-08-01), Kubokoya et al.
patent: 5478761 (1995-12-01), Komori et al.

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