Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2010-10-27

2011-12-13

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000

Reexamination Certificate

active

08076235

ABSTRACT:
Semiconductor devices and methods for fabricating the same. The devices includes a substrate, a first etch stop layer, a dielectric layer, an opening, and an anti-diffusion layer. The first etch stop layer overlies the substrate. The dielectric layer overlies the first etch stop layer. The opening extends through the dielectric layer and the first etch stop layer, and exposes parts of the substrate. The anti-diffusion layer overlies at least sidewalls of the opening, preventing contamination molecule diffusion from at least the first etch stop layer, wherein the anti-diffusion layer is respectively denser than the first etch stop layer and the dielectric layer.

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