Semiconductor device and fabrication method thereof

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S637000

Reexamination Certificate

active

07846832

ABSTRACT:
Semiconductor devices and methods for fabricating the same. The devices includes a substrate, a first etch stop layer, a dielectric layer, an opening, and an anti-diffusion layer. The first etch stop layer overlies the substrate. The dielectric layer overlies the first etch stop layer. The opening extends through the dielectric layer and the first etch stop layer, and exposes parts of the substrate. The anti-diffusion layer overlies at least sidewalls of the opening, preventing contamination molecule diffusion from at least the first etch stop layer, wherein the anti-diffusion layer is respectively denser than the first etch stop layer and the dielectric layer.

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