Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2007-12-25

2007-12-25

Lee, Calvin (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S656000

Reexamination Certificate

active

11261200

ABSTRACT:
Semiconductor devices and methods for fabricating the same. The devices include a substrate, a catalyst layer, a second dielectric layer, and carbon nanotubes (CNTs). The substrate comprises an overlying first dielectric layer with an electrode embedded therein. The catalyst layer overlies the electrode and the first dielectric layer and substantially comprises Co and M1, wherein M1is selected from a group consisting of W, P, B, Bi, Ni, and a combination thereof. The second dielectric layer overlies the catalyst layer and comprises an opening exposing parts of the catalyst layer. The carbon nanotubes (CNTs) are disposed on the exposed catalyst layer and electrically connect the electrode.

REFERENCES:
patent: 6100184 (2000-08-01), Zhao et al.
patent: 6515339 (2003-02-01), Shin et al.
patent: 6949461 (2005-09-01), Malhotra et al.
patent: 7060619 (2006-06-01), Cowley et al.
patent: 2003/0143398 (2003-07-01), Ohki et al.
patent: 2004/0005258 (2004-01-01), Fonash et al.
patent: 2004/0142560 (2004-07-01), Kuo et al.
patent: 2004/0219773 (2004-11-01), Choi et al.
“Iron and Cobalt Silicide Catalysts-Assisted Carbon Nanostructures on the Patterned Si Substrates” Chang et al., 2002, pp. 219-224.
“Carbon Nanotube Vias for Futuer LSI Interconnects” Nihei et al., 2004.

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