Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2007-07-03

2007-07-03

Richards, N. Drew (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S163000, C438S529000

Reexamination Certificate

active

10105282

ABSTRACT:
For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.

REFERENCES:
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5852481 (1998-12-01), Hwang
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5953582 (1999-09-01), Yudasaka et al.
patent: 6031290 (2000-02-01), Miyazaki et al.
patent: 6165824 (2000-12-01), Takano et al.
patent: 6180439 (2001-01-01), Yamazaki et al.
patent: 6197624 (2001-03-01), Yamazaki
patent: 6259138 (2001-07-01), Ohtani et al.
patent: 6274887 (2001-08-01), Yamazaki et al.
patent: 6277679 (2001-08-01), Ohtani
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6365917 (2002-04-01), Yamazaki
patent: 6399960 (2002-06-01), Yamazaki et al.
patent: 6420758 (2002-07-01), Nakajima
patent: 6469317 (2002-10-01), Yamazaki et al.
patent: 6475836 (2002-11-01), Suzawa et al.
patent: 6489952 (2002-12-01), Tanaka et al.
patent: 6501098 (2002-12-01), Yamazaki
patent: 6512271 (2003-01-01), Yamazaki et al.
patent: 6515336 (2003-02-01), Suzawa et al.
patent: 6518594 (2003-02-01), Nakajima et al.
patent: 6529251 (2003-03-01), Hibino et al.
patent: 6545359 (2003-04-01), Ohtani et al.
patent: 6558993 (2003-05-01), Ohtani et al.
patent: 6586766 (2003-07-01), Yamazaki et al.
patent: 6599785 (2003-07-01), Hamada et al.
patent: 6617644 (2003-09-01), Yamazaki et al.
patent: 6635505 (2003-10-01), Tanaka et al.
patent: 6646287 (2003-11-01), Ono et al.
patent: 6657260 (2003-12-01), Yamazaki et al.
patent: 6784037 (2004-08-01), Yamazaki et al.
patent: 6791112 (2004-09-01), Yamazaki et al.
patent: 6803601 (2004-10-01), Nakajima
patent: 6809021 (2004-10-01), Ohtani et al.
patent: 6815273 (2004-11-01), Nakajima et al.
patent: 6891195 (2005-05-01), Yamazaki et al.
patent: 6909114 (2005-06-01), Yamazaki
patent: 6977394 (2005-12-01), Yamazaki et al.
patent: 2001/0025960 (2001-10-01), Ohtani et al.
patent: 2001/0030322 (2001-10-01), Yamazaki et al.
patent: 2001/0038065 (2001-11-01), Kimura
patent: 2001/0049197 (2001-12-01), Yamazaki et al.
patent: 2001/0052950 (2001-12-01), Yamazaki et al.
patent: 2001/0055841 (2001-12-01), Yamazaki et al.
patent: 2002/0001886 (2002-01-01), Ohtani
patent: 2002/0006705 (2002-01-01), Suzawa et al.
patent: 2002/0013022 (2002-01-01), Yamazaki et al.
patent: 2002/0016028 (2002-02-01), Arao et al.
patent: 2002/0017685 (2002-02-01), Kasahara et al.
patent: 2002/0070382 (2002-06-01), Yamazaki et al.
patent: 2002/0110941 (2002-08-01), Yamazaki et al.
patent: 2002/0139980 (2002-10-01), Yamazaki
patent: 2002/0142554 (2002-10-01), Nakajima
patent: 2002/0149016 (2002-10-01), Yamazaki et al.
patent: 2002/0158288 (2002-10-01), Yamazaki et al.
patent: 2003/0122132 (2003-07-01), Yamazaki
patent: 2003/0211662 (2003-11-01), Yamazaki et al.
patent: 2004/0051142 (2004-03-01), Yamazaki et al.
patent: 2004/0115851 (2004-06-01), Tanaka et al.
patent: 2005/0017242 (2005-01-01), Yamazaki et al.
patent: 2005/0051773 (2005-03-01), Nakajima
patent: 2005/0056837 (2005-03-01), Ohtani et al.
patent: 2005/0104068 (2005-05-01), Yamazaki
patent: 2005/0110016 (2005-05-01), Yamazaki
patent: 2005/0161675 (2005-07-01), Kimura
patent: 2005/0189543 (2005-09-01), Yamazaki et al.
patent: 2005/0205868 (2005-09-01), Yamazaki et al.
patent: 2006/0051906 (2006-03-01), Yamazaki
patent: 1 071 124 (2001-01-01), None
patent: 06-148685 (1994-05-01), None
patent: 07-130652 (1995-05-01), None
patent: 07-235680 (1995-09-01), None
patent: 08-274336 (1996-10-01), None
patent: 10-247735 (1998-09-01), None
patent: 2000241832 (2000-09-01), None
patent: 2001-035808 (2004-02-01), None
Australian Patent Office Search Report and Written Opinion of Counterpart Singapore Patent Application No. 200201696-2, Feb. 16, 2004, 9 pages.
Ghandhi, S. “VLSI Fabrication Principles-Silicon and Gallium Arsenide,”A Wiley-Interscience Publication, Second Edition, 1994, pp. 552-553.

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