Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2007-01-16

2007-01-16

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S614000, C438S688000, C438S615000, C438S652000, C257SE21002

Reexamination Certificate

active

11020327

ABSTRACT:
A bonding pad of a semiconductor device and a fabrication method thereof are disclosed. A semiconductor device having a pad formed by exposing a predetermined region of a metal line formed over a semiconductor substrate includes an alloy layer formed on the metal line exposed through the pad. The alloy layer is formed from a reaction between the metal line and a metal having a melting point less than or equal to 1000° C.

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