Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2006-10-10

2006-10-10

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Containing germanium, ge

C257S382000

Reexamination Certificate

active

07119417

ABSTRACT:
A semiconductor device of this invention includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate; a pair of source and drain electrodes respectively formed in regions of the semiconductor substrate situated on opposite sides of the gate electrode in a plan view; and a germanium-containing channel layer situated below the gate electrode to sandwich an gate insulator therebetween and intervening between the pair of source and drain electrodes, wherein a silicide layer forming at least a part of the source and drain electrodes has a lower germanium concentration than the channel layer.

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patent: 6657223 (2003-12-01), Wang et al.
patent: 6867428 (2005-03-01), Besser et al.
patent: 2003/0057439 (2003-03-01), Fitzgerald
patent: 8-167718 (1996-06-01), None
patent: 2964925 (1999-08-01), None
patent: 2002-314089 (2002-10-01), None
Hoyt, J. L. et al., “Strained Silicon MOSFET Technology”, Microsystems Technology Laboratory, MIT, Cambridge, MA, Dec. 2002.
Donaton R. A. et al., “Co Silicide formation on SiGeC/Si and SiGe/Si layers” Apl. Phys. Lett. 70 (10), Mar. 10, 1997.

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