Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2006-07-18

2006-07-18

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257S775000, C257S761000, C257S762000

Reexamination Certificate

active

07078810

ABSTRACT:
A semiconductor device and fabrication thereof. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 Å. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.

REFERENCES:
patent: 6093628 (2000-07-01), Lim et al.
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6291885 (2001-09-01), Cabral et al.
patent: 2002/0121699 (2002-09-01), Cheng et al.
patent: 2005/0277292 (2005-12-01), Peng et al.

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