Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2005-11-22

2005-11-22

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S155000, C438S164000, C438S180000, C438S185000, C438S195000

Reexamination Certificate

active

06967129

ABSTRACT:
This invention provides a semiconductor device having high operation performance and high reliability. An LDD region707overlapping with a gate wiring is arranged in an n-channel TFT802forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions717, 718, 719and720not overlapping with a gate wiring are arranged in an n-channel TFT804forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region707than in the LDD regions717, 718, 719and720.

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