Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2011-03-22

2011-03-22

Pert, Evan (Department: 2893)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

C438S123000, C438S119000, C257SE21509

Reexamination Certificate

active

07910402

ABSTRACT:
For a suppressed breakage after a flip chip connection of a semiconductor device using a low-permittivity insulation film and a lead-free solder together, with an enhanced production yield, bump electrodes (2) are heated by a temperature profile having, after a heating up to a melting point of the bump electrodes (2) or more, a cooling in which a temperature within a range of 190 to 210° C. is kept for an interval of time within a range of 3 to 15 minutes, and a condition is met, such that 1.4<Lb/La<1.6, where Lais a diameter of second electrode pads (33), and Lbis a diameter of first electrode pads (13).

REFERENCES:
patent: 2004/0094842 (2004-05-01), Jimarez et al.
patent: 2005-235905 (2005-09-01), None

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