Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-27
2007-02-27
Clark, S. V. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S614000, C438S740000
Reexamination Certificate
active
10258062
ABSTRACT:
A method of efficiently and inexpensively fabricating a chip-size package having an electrode pitch expanded by forming a conductor wiring on the electrode forming surface side of a semiconductor chip, especially, a method for facilitating wiring and bump forming. A semiconductor device comprising a semi-conductor elements and conductor wirings formed on the semiconductor elements by etching wiring-forming metal foil; and a fabrication method for a semiconductor device comprising the steps of laminating wiring forming metal foil on the electrode forming surface side on the semiconductor, forming a resist wiring pattern on the metal foil, etching the metal foil, and slicing the device into individual elements.
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Ohsawa Shingji
Okamoto Hiroaki
Saijo Kinji
Suga Tadatomo
Yoshida Kazuo
Browdy and Neimark PLLC
Clark S. V.
Suga Tadatomo
Toyo Kohan Co. Ltd.
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