Semiconductor device and fabrication method therefor

Details Semiconductor device and fabrication method therefor Semiconductor device and fabrication method therefor

2006-11-21

2006-11-21

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S514000, C438S516000, C438S546000, C257SE21135

Reexamination Certificate

active

07138322

ABSTRACT:
An n-type channel diffused layer and an n-type well diffused layer are formed in the top portion of a semiconductor substrate, and a gate insulating film and a gate electrode are formed on the semiconductor substrate. Using the gate electrode as a mask, boron and arsenic are implanted to form p-type extension implanted layers and n-type pocket impurity implanted layers. Fluorine is then implanted using the gate electrode as a mask to form fluorine implanted layers. The resultant semiconductor substrate is subjected to rapid thermal annealing, forming p-type high-density extension diffused layers and n-type pocket diffused layers. Sidewalls and p-type high-density source/drain diffused layers are then formed.

REFERENCES:
patent: 5966623 (1999-10-01), Khosla et al.
patent: 6069062 (2000-05-01), Downey
patent: 6261889 (2001-07-01), Ono
patent: 6432802 (2002-08-01), Noda et al.
patent: 6437406 (2002-08-01), Lee
patent: 6455385 (2002-09-01), Alvis et al.
patent: 6808997 (2004-10-01), Jain et al.
patent: 04-085926 (1992-03-01), None
patent: 08-181311 (1996-07-01), None
patent: 2000-269492 (2000-09-01), None
patent: P2002-76136 (2002-03-01), None
Der-Gao Lin et al., “The Effect of Fluorine on MOSFET Channel Length”, Oct. 1, 1993, IEEE Electron Device Letters, IEEE Service Center, New York, NY pp. 469-471, XP000397398.

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