Semiconductor device and fabrication method therefor

Details Semiconductor device and fabrication method therefor Semiconductor device and fabrication method therefor

2011-03-29

2011-03-29

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S330000, C257SE21679, C257SE21680, C438S201000, C438S211000, C438S270000

Reexamination Certificate

active

07915661

ABSTRACT:
The present invention provides semiconductor device and a fabrication method therefor. The semiconductor device includes trenches (11) formed in a semiconductor substrate (10), first ONO films (18) provided on both side surfaces of the trenches, and first word lines (22) provided on side surfaces of the first ONO films (18) and running in a length direction of the trenches (11). According to the present invention, it is possible to provide a semiconductor device and a fabrication method therefor, in which higher memory capacity can be achieved.

REFERENCES:
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patent: 6432782 (2002-08-01), Lung et al.
patent: 2004/0238879 (2004-12-01), Endoh et al.
patent: 6459960 (1989-03-01), None
patent: 2003508914 (2003-03-01), None
patent: 2004356207 (2004-12-01), None
patent: 2005197425 (2005-07-01), None

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