Semiconductor device and fabrication method of the same

Details Semiconductor device and fabrication method of the same Semiconductor device and fabrication method of the same

2005-04-05

2005-04-05

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S151000, C438S164000, C438S166000, C438S486000, C438S487000

Reexamination Certificate

active

06875628

ABSTRACT:
Nickel is introduced to a predetermined region of a peripheral circuit section, other than a picture element section, on an amorphous silicon film to crystallize from that region. After forming gate electrodes and others, sources, drains and channels are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film whose crystal is grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the amorphous silicon film can be obtained.

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Chinese Office Action Dated Sep. 5, 2003.

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