Semiconductor device and fabrication method for the same

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S109000, C257SE21503

Reexamination Certificate

active

11062664

ABSTRACT:
A method for fabricating a semiconductor device includes mountain a first semiconductor chip on a wiring substrate, bonding a spacer having a first main surface and a second main surface opposing the first main surface such that the first main surface is in contact with the first semiconductor chip. The method further includes bonding a second semiconductor chip having a surface, onto the second main surface via a layer of a die bonding material selectively formed on a part of a third main surface.

REFERENCES:
patent: 6238515 (2001-05-01), Tsujimoto et al.
patent: 6710455 (2004-03-01), Goller et al.
patent: 2001/0013643 (2001-08-01), Nakanishi et al.
patent: 2003/0054162 (2003-03-01), Watson
patent: 2004/0051168 (2004-03-01), Arai et al.
patent: 2004/0084760 (2004-05-01), Liu et al.
patent: 2004/0126926 (2004-07-01), Arai et al.
patent: 2004/0222534 (2004-11-01), Sawamoto et al.
patent: 1195809 (2002-04-01), None
patent: 57-37839 (1982-03-01), None
patent: 5-335411 (1993-12-01), None
patent: 2002-118081 (2002-04-01), None
patent: 2002-141459 (2002-05-01), None
patent: 2002-261233 (2002-09-01), None
patent: 2003-007963 (2003-01-01), None
patent: 2003-100953 (2003-04-01), None
patent: 2003-147300 (2003-05-01), None
patent: 2003-303937 (2003-10-01), None
patent: 2004-071997 (2004-03-01), None
patent: 506623 (2002-10-01), None
patent: 540272 (2003-07-01), None
patent: 546795 (2003-08-01), None
Final Office Action Prior to Rejection issued by the Taiwanese Patent Office on Jun. 27, 2006, for Taiwanese Patent Application No. 94105308, and English-language translation thereof.
Notice of Rejection issued by the Japanese Patent Office on Jan. 30, 2007, for Japanese Patent Application No. 2004-48266, and English-language translation thereof.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and fabrication method for the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and fabrication method for the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and fabrication method for the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3867234

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.