Semiconductor device and fabrication method for the...

Details Semiconductor device and fabrication method for the... Semiconductor device and fabrication method for the...

2009-01-09

2010-06-01

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE23116, C257SE23123, C257S632000

Reexamination Certificate

active

07728389

ABSTRACT:
A semiconductor device and a fabrication method for the semiconductor device which can remove the sacrifice layer deposited on the semiconductor device surface in a short time and whose manufacturing yield can be improved are provided. The semiconductor device and the fabrication method for the semiconductor device includes a field effect transistor4including a gate electrode1, a drain electrode2, and a source electrode3formed on a semiconductor substrate; and a hollow protective film5for covering the gate electrode1, the drain electrode2, and the source electrode3, and being provided on the semiconductor substrate4A. The hollow protective film5includes a 1st cap layer7; a second cap layer10placed on the first cap layer7; a plurality of openings12formed on the position of the first cap layer7of the upper part of the drain electrode2and the source electrode3; a sealed part12A for sealing the openings12by the second cap layer10, wherein oxygen plasma is supplied through the openings12, and ashing removal of the sacrifice layer6is performed.

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