Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2011-08-23
2011-08-23
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257SE21043
Reexamination Certificate
active
08003502
ABSTRACT:
A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
REFERENCES:
patent: 6482681 (2002-11-01), Francis et al.
patent: 6707111 (2004-03-01), Francis et al.
patent: 6762097 (2004-07-01), Takei et al.
patent: 2004/0084724 (2004-05-01), Kapels et al.
Hille Frank
Mauder Anton
Niedernostheide Franz-Josef
Pfaffenlehner Manfred
Schaeffer Carsten
Infineon Technologies Austria AG
Movva Amar
Smith Bradley K
SpryIP, LLC
LandOfFree
Semiconductor device and fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and fabrication method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2710715