Semiconductor device and fabricating method thereof

Details Semiconductor device and fabricating method thereof Semiconductor device and fabricating method thereof

2011-05-10

2011-05-10

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C257SE21022

Reexamination Certificate

active

07939439

ABSTRACT:
Disclosed is a semiconductor device which includes a substrate having an air layer or void therein, an interlayer dielectric film above the substrate, and a metal wiring having a spiral structure on the interlayer dielectric film corresponding to or over the air layer. The semiconductor device exhibits reduced parasitic capacitance between the metal wiring (used as an inductor) and the substrate, thereby improving a self-resonance frequency as well as an applicable frequency band of the inductor.

REFERENCES:
patent: 6859129 (2005-02-01), Tsai et al.

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