Semiconductor device and electronic apparatus

Details Semiconductor device and electronic apparatus Semiconductor device and electronic apparatus

2008-10-10

2011-10-11

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257SE27006, C257SE27064

Reexamination Certificate

active

08035164

ABSTRACT:
A semiconductor device includes: a substrate having a first surface; an insulation layer; a semiconductor layer disposed to the first surface of the substrate with the insulation layer interposed between the semiconductor layer and the first surface; and a piezoelectric layer that is positioned between the first surface and the semiconductor layer, and disposed in a region included and interposed in the insulation layer.

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Sakai et al., “Separation by Bonding Si Islands (SBSI) for LSI Applications;”Second International SiGe Technology and Device Meeting, Meeting Abstract; May 2004; pp. 230-231.
Yamazaki et al., Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications, IEICE Trans. Electron, Apr. 2005, 656-661, vol. E88-C,No. 4, The Institute of Electronics, Information and Communication Engineers, Japan.
Yamazaki et al., Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSIs, Jun. 13-16, 2004, ED 2004, vol. 104,No. 152, The Institute of Electronics, Information and Communication Engineers, Japan.

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