Semiconductor device and driving method therefor

Details Semiconductor device and driving method therefor Semiconductor device and driving method therefor

2007-06-13

2008-10-28

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S185270, C257S107000

Reexamination Certificate

active

07443722

ABSTRACT:
A semiconductor device includes a bulk semiconductor substrate, a plurality of storage elements, a bit line, a first voltage being applied to the first region side of the thyristor, and a voltage lower than the first voltage being applied to a word line. The plurality of storage elements formed on the bulk semiconductor substrate and each including a thyristor formed on the bulk semiconductor substrate and including a first region of a first conductor type, a second region of a second conduction type opposite to the first conduction type, a third region of the first conduction type and a fourth region of the second conduction type jointed together in order, a gate electrode formed on the third region, and a field effect transistor formed on the semiconductor substrate on which the thyristor is formed and connected to the fourth region of the thyristor.

REFERENCES:
patent: 5268587 (1993-12-01), Murata et al.
patent: 6462359 (2002-10-01), Nemati et al.
patent: 2007/0189067 (2007-08-01), Goodwin
Farid Nemati and James D. Plummer, “A Novel High Density, Low Voltage SRAM Cell with a Vertical NDR Device”, 1998 IEEE, VLSI Technology Tech. Dig. p. 66 1998.
Farid Nemati and James D. Plummer A Novel Thyristor-based SRAM Cell (T-RAM) for High-Speed, Low-Voltage, Giga-scale Memories, 1999 IEEE IEDM Tech., p. 283 1999.
Farid Nemati, Hyun-Jin Cho, Scott Robins, etc. “Fully Planar 0.562μm2 T-RAM Cell in a 130nm SOI CMOS Logic Technology for High-Density High-Performance SRAMS” 2004 IEEE IEDM Tech., p. 273 2004.

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