Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2005-03-30
2009-12-08
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000, C365S063000, C365S145000
Reexamination Certificate
active
07630233
ABSTRACT:
The invention provides a semiconductor device including a memory of a simple structure to provide an inexpensive semiconductor device and a driving method thereof. The semiconductor device of the invention includes a phase change memory including a memory cell array having a plurality of memory cells, a control circuit that controls the phase change memory, and an antenna. The memory cell array includes a plurality of bit lines that extend in a first direction and word lines that extend in a second direction perpendicular to the first direction. Each of the plurality of memory cells includes a phase change layer provided between the bit lines and the word lines. In the semiconductor device having the aforementioned structure, one or both of a conductive layer that forms the bit lines and a conductive layer that forms the word lines transmits light.
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Office Action (Application No. 200580010159.0) Dated Apr. 4, 2008.
Arai Yasuyuki
Kato Kiyoshi
Yamazaki Shunpei
Nguyen Viet Q
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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