Semiconductor device and DRAM controller

Details Semiconductor device and DRAM controller Semiconductor device and DRAM controller

2011-03-22

2011-03-22

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S149000

Reexamination Certificate

active

07911863

ABSTRACT:
According to a semiconductor device of the present invention, a differential potential between a sense amplification level and a precharge level of a sense amplifier is set to a power supply potential (VCC-GND) so as to improve resistance against degradation of hold characteristics. Further, low power consumption can be realized along with the improvement. Additionally, the precharge level is set to a power supply of GND or VCC so as to realize a stable supply of the precharge level. Further, a chip size can be reduced since a power supply circuit for precharge is not needed.

REFERENCES:
patent: 5477498 (1995-12-01), Ooishi
patent: 5905685 (1999-05-01), Nakamura et al.
patent: 5982673 (1999-11-01), Kiehl
patent: 6424577 (2002-07-01), Sim
patent: 2004-220753 (2004-08-01), None

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