Semiconductor device and display comprising same

Details Semiconductor device and display comprising same Semiconductor device and display comprising same

2007-04-17

2007-04-17

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S632000, C438S197000

Reexamination Certificate

active

10515120

ABSTRACT:
In an inverse-stagger MOSFET (1), a gate insulating layer (4) made of amorphous aluminum oxide is so formed as to face a channel layer (5) which serves as the semiconductor layer, and which is made of zinc oxide. With this arrangement, a defect level at an interface between the channel layer (5) and the gate insulating layer (4) is reduced, thereby obtaining performance equivalent to that of a semiconductor apparatus in which all the layered films are crystalline. This technique is applicable to a staggered MOSFET and the like, and has high versatility.

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